Abstract

 The reduced structural complexity of atomically thin amorphous carbons makes it suitable for semiconductor technology. Inherent challenges arise from transfer processes subsequent to growth on metallic substrates, posing significant challenges to the accurate characterization of amorphous materials, thereby compromising the reliability of spectroscopic analysis. Here this work presents a novel approach: direct growth of ultra-thin amorphous carbon with tuned disorder on a dielectric substrate (SiO₂/Si) using photochemical reaction and thermal annealing process with a solid precursor. This work characterizes the amorphous carbon films' disorder using spectroscopic techniques, such as X-ray photoelectron spectroscopy, Electron energy loss spectroscopy, and Raman spectroscopy, which offer greater convenience compared to microscopy-based studies. This method, rooted in comprehensive spectroscopic characterization, elucidates characteristic signatures inherent to the amorphous carbon films. These findings reveal that Raman spectroscopy is particularly effective in identifying the amorphous phase of atomically-thin carbon. Additionally, I-V characterization and high-frequency dielectric measurements showcase the potential application of directly grown amorphous carbon films in the semiconductor industry, where nanometer-level thin conductors and dielectrics are commonly utilized. This transfer-free characterization method provides a useful tool to find the correlation between atomic structure and electrical/optical properties, giving valuable insights into comprehensive crystallographic fundamental research.